TiO/sub 2/-MOCVD thin films on large area macroporous silicon for capacitor applications

The authors present results of the deposition and characterization of TiO/sub 2/ thin films, prepared by low pressure metal organic chemical vapor deposition (MOCVD) at 400/spl deg/C in an N/sub 2/ or N/sub 2//O/sub 2/ atmosphere using titanium tetraisopropoxide as precursor. The electrical resistivity as a function of thermal treatment is reported and discussed in relation to the microstructure. The crystallographic structure and crystallite dimensions are determined by X-ray diffraction spectrometry. The application of TiO/sub 2/ thin films as the dielectric layer for a capacitor on macroporous silicon is reported.