A nearly ideal SiC Schottky barrier device edge termination

A simple edge termination based on oxide ramp profile around the Schottky contact is used on a Ni Schottky rectifier fabricated on a 2.7/spl times/10/sup 16/ n-type 6H-SiC epilayer. Three anneals of the Schottky contacts were studied experimentally. The diodes annealed at 900/spl deg/C showed excellent reverse characteristics with a nearly ideal breakdown at about 800 V. Forward characteristics followed thermionic emission theory with ideality factor nearly one.