6H-SiC MOSFET structures for power device fabrication process characterisation

N-channel MOSFETs on Silicon Carbide (SiC) have been fabricated in order to characterise the SiC process technology. From the analysis of MOSFET and test structure electrical characteristics, we can extract parameters concerning channel properties, oxide and interface quality as well as ohmic contact resistivity. Temperature behaviour is also analysed since it differs from standard Silicon (Si) device behaviour.