Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes

Highly reflective metal contacts for the p-layers of AlGaN-based deep ultraviolet light emitting diodes (DUV LEDs) emitting at 305 nm have been investigated. Different Pd-Al metal stacks have been examined and a reflectivity of 82% was obtained after annealing, which is about two times the value measured for conventional Pd contacts. The high reflectivity is attributed to the formation of an Al
₄
Pd phase besides an Al phase in the annealed contact. DUV LEDs with highly-reflective Pd-Al contacts exhibited an increase of the light output power by 30% at a dc current of 20 mA.