Study on thermal sensitivity of highly inhomogeneous Ni/4H-SiC Schottky diode over a wide temperature range

This paper investigates the high-temperature thermal response of a Ni/SiC-Schottky diode with a severe degree of contact in homogeneity. Forward characteristics, visibly affected by non-uniform Schottky barrier height in the 25°C-450°C domain are very accurately reproduced using a model based on parallel conduction. Constant sensitivity is established for the analyzed sample in the entire measurement temperature range. The impact of extracted parameters on sensitivity value is discussed. Results show that SiC-Schottky diodes with considerable contact inhomogeneity can be used as wide-range temperature sensors.