New trends in high voltage MOSFET based on wide band gap materials

Recent advances and new trends in high voltage SiC based MOSFETs are analyzed. The main focus is done on design optimization strategies for reducing the on-state resistance. Gate oxide treatments for improving the interface quality resulting in a lower channel resistance are reviewed as well as solutions for lowering the JFET and bulk resistance components. The 3
^rd
quadrant operation, short-circuit capability and switching performance are analyzed together with design strategies for their improvement. Finally, the limits of high voltage MOSFETs are outlined and future power devices to overcome the MOSFETs limits in ultra-high voltage applications are presented.