Higher switching speed of power devices in series connection achieved by modifying the gate driver architecture

This paper presents the study on gate driver circuitries implemented to drive power devices in series connection with the objective to minimize the conducted EMI perturbations and as well to improve the switching speed of the power devices. More specifically, the propagation paths of parasitic currents generated under very high switching speed are studied in different configurations trying to reduce the parasitic capacitance of each gate driver circuit with respect to ground/control reference potential and to minimize the common mode currents. In complex power converters, multi-cell, multi-level or even series connection of power devices, many driver circuits are required and implemented. Similarly, in such converters, there are several dv/dt sources generated at different floating points that are exiting the isolated barriers of the gate drivers (supplies and control signal isolation units) which mean that conducted EMI perturbations can be amplified and the switching speed of the power devices could be affected by multi-parasitic capacitances. Based on previous works, the paper analyses the best possible configurations to minimize the common mode currents in series connected transistor topologies and to reduce the parasitic capacitance of the gate driver circuitries leading as well to a significant improvement of the switching speed of the power devices. In this article, experimental validations are used to approve the analysis.