Magnetoresistance oscillations in InSb and GaSb whiskers at low temperatures

The parallel and transverse magnetoresistance in InSb and GaSb whiskers doped with tin and tellurium, respectively, were investigated in the temperature range 4.2-77 K and magnetic field 0-14 T. Shubnikov-de Haas magnetoresistance oscillations were revealed at low temperatures for both semiconductor materials with impurity concentration near the metal-insulator transition. The following parameters of InSb and GaSb whiskers as oscillation periods, cyclotron effective mass of electrons, g-factor and Dingle temperature were defined.