SPICE model extraction for a MOSFET based on a parametric simulation and waveform measurement

A based-on-measurement approach to extract the SPICE model of MOSFETs accurately is presented in this paper. The main idea of this approach is to adjust the MOSFET waveforms obtained from simulation to those from measurement by modifying the component's internal parameters. Thanks to a parametric study which identifies the influence level of each MOSFET parameter on each zone of the MOSFET waveforms, the correlation procedure becomes intuitive and easy. Moreover, a Matlab-based tool with interaction with Simetrix (an electrical circuit simulator) has been developed to display in real-time the comparison between simulation and measurement waveforms of the MOSFET under test and provide the instruction about the parameter to be modified. The SPICE model extracted from this tool contains reliable values of MOSFET parasitic elements. Therefore, it is suitable to be used in EMC simulations in order to predict the levels of conducted emissions of a product/system containing the component. A good coherence up to 10 MHz was obtained between simulation and measurement.