Impact of particle LET on combinational logic single-event effects for advanced technologies

28-Nm planar, 20-nm planar, and 16-nm FinFET technology combinational and flip-flop circuits are investigated using different LET particles. An analytical model is developed to study the ratio of logic to flip-flop (FF) single-event (SE) cross-section as a function of LET particles. Results indicate that high-LET particles have a much stronger impact on the logic single-event (SE) cross-section as compared to the flip-flop (FF) SE cross-section for all three technology nodes.