Short and deep drain MOSFET for space applications: Device and circuit level analysis

We propose a novel short and deep drain (SDD) MOSFET structure and SDD based circuits that are suitable for space applications. The 3-D TCAD simulations for heavy ion radiation with LET of 10 MeV-cm
²
/mg have been carried out on both SDD MOSFET and SDD inverter. From TCAD simulations, we observe that SET magnitude in SDD inverter is reduced by 43% by using shorter drain and by 17% by using deeper drain compared to conventional MOSFET inverter if the areas of both designs are kept the same. Further, a detailed TCAD simulation on inverter design also showed that SDD inverter has similar power and delay values as those of the conventional MOSFET if areas are the same.