Influence of neutron irradiation on electron traps induced by ageing test in AlInN/GaN HEMTs

This paper shows the impact of low fluence neutron irradiation on AlInN/GaN HEMTs before and after a Negative Gate Bias stress done at a gate-to-source voltage (Vgs) of - 20 V and at a drain-to-source voltage (Vds) of 0 V during 216 h. We have shown that the neutron irradiation induces a decrease in the drain current of 6% and an increase in access resistance of 8% for the unstressed component in opposite to the stressed component. In fact, a rise in drain current of 9% and no evolution of the access resistance has been observed for a stressed AlInN/GaN HEMTs. This phenomenon is related to the formation of complex cluster between the electron traps induced by the ageing test and those involved by the neutron irradiation.