Impact of multiple write cycles on the radiation sensitivity of NAND flash memory devices

The work presented here investigates the impact of multiple write cycles on NAND Flash memory radiation sensitivity. Cobalt 60 tests have been performed in order to study the memory array data corruption evolution with respect to the TID level. Heavy ion tests have also been performed to assess the impact of multiple write cycles on the SEU cross section. The irradiated devices were initialized before irradiation with different numbers of write cycles in separated sectors of the memory array. This configuration allowed studying the number of write cycle influence on the radiation sensitivity.