Use of temperature-switching approach to evaluate the ELDRS of bipolar devices

The low dose rate response of bipolar ICs and discrete device are evaluated on the basis of different experiments. Based on experiments, a time-saving and conservative approach-temperature switching approach (TSA)-to simulate the enhanced low dose rate sensitivity (ELDRS) of bipolar devices is presented. Good agreement is observed between the predictive curve obtained with the temperature switching approach and the low dose rate data. Moreover, a description of the underling mechanisms of TSA is analyzed in this paper.