Transfer Matrix Formalism-Based Analytical Modeling and Performance Evaluation of Perovskite Solar Cells

We present a physics-based analytical model for p-i-n and n-i-p configurations of perovskite solar cell incorporating the effect of surface recombination velocities at the transport layers. We use transfer matrix formalism combined with carrier transport equations to derive a unified optoelectronic expression for wavelength-dependent photocurrent. We establish the accuracy of the proposed model by calculating the current–voltage characteristics of both configurations and comparing them with published experimental data. The root-mean-square error in current–voltage characteristics and relative error in the corresponding efficiencies are found to be < 0.3 mA/cm
²
and < 3%, respectively, for all configurations. We further illustrate the applicability of our model by analyzing the effect of changing transport layer material, a new layer insertion in the solar cell structures and/or variation of different layers’ thicknesses. We show that the derived expression overcomes the shortcomings of the existing analytical models of perovskite solar cells, which fail to describe the aforementioned effects.