AC-driven perovskite light-emitting field-effect transistors

Summary form only given. In recent years, hybrid organic-inorganic perovskites has drawn great attention towards applications in light-emitting devices such as light-emitting diodes [1], X-ray scintillators [2] and lasers [3]. Recently we have demonstrated a perovskite light-emitting field-effect transistors (PeLEFETs) [4] operating at low temperatures, with gate-controlled carrier injection and recombination zone. Despite the balanced carrier injection provided by the FET configuration, the performance of these devices is strongly affected by ionic transport effects which cause large hysteresis and hinder operation at room temperature.In this work we present an improved CH3NH3PbI3 PeLEFET with bottom gate, top contact configuration (Fig. 1a), which, compared to the previously reported bottom gate bottom contact configuration [4], yields a tenfold improvement of the field-effect electron mobility, up to 0.1 cm2V-1s-1 and 0.01 cm2V-1s-1 for holes. Furthermore, we show that AC-driven gate bias modulation, allows minimizing the ionic drift within the perovskite channel, hence reducing the effects of the ionic screening and increasing the brightness of electroluminescence compared to its DC-driven counterpart at comparable voltages.