Modeling of black phosphorus vertical TFETs without chemical doping for drain

A new vertical tunnel FET design based on black phosphorus is presented in this paper adopting asymmetric layer numbers for top and bottom layer with undoped drain. The results show that the SS and I
_on
/I
_off
can be maintained below 10 mV/dec and beyond 10
⁵
, respectively, when channel length is down to 3 nm.