Random telegraph noise analysis in redox-based resistive switching devices using KMC simulations

This paper presents a physical model to investigate the random telegraph noise (RTN) as an important source of the stochastic variability in redox-based resistive switching RAMs. Our noise analysis showed a higher level of instability during the high resistance state, where the oxygen vacancies, as the dominant traps inside the oxide, assist the current flow. The role of some important factors like read and reset voltages on the fluctuations of the reading process was studied.