PNIN-GAA-tunnel FET with palladium catalytic metal gate as a highly sensitive hydrogen gas sensor

This work reports an n
⁺
source pocket doped PIN gate all around tunnel FET (PNIN-GAA-TFET) with Palladium as a catalytic metal gate for hydrogen detection. The basis of sensing of H
₂
molecules is the dissociation of H
₂
into Hydrogen atoms followed by their diffusion into the Palladium (Pd) gate leading to formation of a dipole layer due to the polarization of H atoms at the Pd-SiO
₂
interface. It is analyzed that the sensitivity of GAA-TFET based H
₂
gas sensor is appreciably enhanced by many orders with the integration of n
⁺
source pocket at the tunneling junction. Moreover, for evaluating the stability of the sensor, the performance of the sensor is analyzed at ambient temperatures other than the room temperature. Results reveal that the PNIN-GAA-TFET based H
₂
gas sensor is practically stable for the range of ±100K w.r.t. 300K. It is examined that for the entire pressure range the sensitivity of PNIN-GAA-TFET based H
₂
gas sensor is maximum at the room temperature.