Evaluation of reconfigurable tunnel FETs for low power and high performance operation

Undoped channel materials and multiple independent gates allow reconfiguration of the transistor operation between n- and p-type behavior. Materials with low effective masses allow in addition to switch on demand between a high-performance (HP) and a low-power (LP) mode, operating the transistor beyond and below the 60 mV/dec subthreshold slope limit, respectively. Based on 22 nm double-pattering design rules, a reconfigurable tunnel nanoFET device architecture is proposed, which allows n/p- as well as HP/LP-mode reconfiguration. Important key performance indicators for the technology evaluation at the device level are extracted by means of an augmented drift-diffusion simulator and at the inverter level by means of an empirical compact model.