Physical modeling of the electroforming process in resistive-switching devices

We present a numerical drift-diffusion model that combines bulk ionic transport with electrode kinetics for oxygen exchange to describe the electroforming process in resistive-switching devices. Simulations of electroforming by voltage ramps are conducted and the conductive filament formation is analyzed in dependence of various kinetic parameters. It is shown how the filament growth direction and the post-forming resistance state are governed by the rate of oxygen exchange compared to the rate of ionic transport inside the oxide layer.