Modeling of electrical activation ratios of phosphorus and nitrogen doped silicon carbide

We propose an empirical model to accurately predict electrical activation ratios of phosphorus and nitrogen implanted silicon carbide for arbitrary annealing temperatures. We introduce model parameters and compare the activation behaviour of the two donor-type dopants. Our investigations show that the activation ratio of the nitrogen implanted silicon carbide is similar to a step function, while the activation ratio for the phosphorus implanted silicon carbide increases continuously with post-implantation annealing temperature. The model has been implemented into Silvaco's Victory Process simulator, which has enabled accurate predictions of dopant activation in postimplantation steps for silicon carbide-based processes. Several simulations have been performed to extract the depth profiles of the active dopant concentrations and to predict the activation as a function of total doping concentration and annealing temperature.