Sub-mA threshold 1.3 μm CW lasing from electrically pumped micro-rings grown on (001) Si

We demonstrate the first electrically pumped quantum-dot micro-ring lasers epitaxially grown on (001) silicon. Continuous-wave lasing around 1.3 μm was achieved with ultra-low thresholds as small as 0.6 mA and maximum operation temperatures up to 100°.