Design of high temperature gate driver for SiC MOSFET for EV motor drives

High temperature (HT) gate driver is a key technology for the motor drive application for electrical vehicle (EV) in HT environment. Based on the available HT devices, this paper introduces the design of HT gate driver for SiC MOSFET. The gate driver architecture with isolation function is discussed first. Then, gate driver hardware design is presented. Besides the basic driving function of driving ability and isolation, the over current protection and cross-talk suppression functions of the gate driver are emphasized and simulated, too. With the design process in this paper, SiC MOSFET can be driven stably and reliably at HT.