An improved method for determination of parasitic elements for deep submicron multi-finger MOSFETs

A new direct extraction method for the determination of the parasitic capacitances of multi-finger MOSFETs is presented in this paper. This method is based on a general scalable small signal equivalent circuit model under pinch-off bias condition. The main advantage of this approach is that all parasitic capacitances including C
_pg
, C
_pd
and C
_pgd
can be extracted simultaneously by using MOSFETs of different sizes but with the same pad structure. Good agreement is obtained between modeled and measured results for a few of multi-finger MOSFETs.