Impact of back plane doping on RF performance of FD-SOI transistor

In this paper, we presents the effect of higher back plane doping on analog figure of merit of fully depleted-silicon on insulator (FD-SOI) MOSFETs at RF frequencies. Procedure for DC and RF parameter extraction at RF frequencies has been discussed. Surface potential based Industry standard BSIM-IMG model for FD-SOI MOSFETs with enhanced gate parasitic network is used for validation of extracted DC and RF parameters such as gate resistance, gate parasitic capacitance, output conductance, transconductance.