Comparison of heat outflow in dense sub-14nm contemporary NFETs: Bulk/SOI, inserted-oxide FinFET and nanowire FET

Since the invention of iFinFET devices, there has been literature suggesting various electrical and thermal improvements it could have over gate-all-around NWFETs. In this work, we have compared contemporary NFETs for 7-nm CMOS technology node for their electrical only and thermal only performance using calibrated 3-D TCAD simulations. This allowed us to simulate relatively larger device structures required for analysis of thermal behavior of these devices with ease, while we could utilize most advanced mobility models to simulate smaller device structures to address electrical performance of these devices. While electrical performance of all these devices is comparable, SOI FinFETs show at least 30 degree Kelvin higher temperature as compared to other devices in thermal simulations, while the bulk FinFETs can achieve 40 degree Kelvin lower temperature in presence of an identical thermal power source. The nanowire and iFinFET depict moderate thermal behavior in this comparison.