Effect of Ca(OH)2, hBN and Mg(OH)2 based insulators as composite oxides in magnetic tunnel junction memory device properties

Magnetic tunnel junctions (MTJ) have emerged as a possible alternative to charge based data storage cells. With the development in 2-dimensional materials, non-conventional insulators like 2D hexagonal boron nitride (hBN), Ca(OH)
₂
and Mg(OH)
₂
have emerged as possible dielectrics in future nanoscale devices. Thus it could be interesting to investigate the application of these materials as insulators in MTJ devices. In this work, we have studied the effect of Ca(OH)
₂
, hBN and Mg(OH)2 based composite oxides in a MTJ device. The barrier height of the composite oxide and effective mass of the same has been calculated using Maxwell-Garnett model. With the MTJ Lab tool available at nanohub, device characteristics were calculated. We have studied various MTJ parameters like parallel and anti-parallel resistance and differential resistance, tunnelling magneto resistance (TMR) and differential TMR (DTMR), and the variation of spin transfer torque (STT) components (In-Plane and Out-of-Plane STT) with voltage.