Bandgap generation in 2D materials

Two-dimensional materials have evoked electronic industry with their perpetual applications since last one decade. After the discovery of first two-dimensional material i.e Graphene in 2004, it has attracted researchers to look for their application in electronics. Graphene is well studied 2D material because of its availability in natural form and it has been used in various electronic application since its first research. For electronics application of these 2D materials, a bandgap of 0.4 eV is required. Graphene, Silicene, Germanene and Stanene have been studied in this paper for use in electronics. Band structure of these materials have been calculated using DFT (Density Functional Theory) and it has been found that they exhibit a zero bandgap in their pristine form. Bandgap in each of these material has been generated using structural defects. With Stone-wales a bandgap of 0.1-0.22 eV is generated, whereas with single-vacancy defect it is 0.09-0.17 eV. A comparative study of the 2D material based device with introduction of defects is done for future reference. This paper highlights the probable use of stanene as next generation 2D material. Decrement in the current has been observed with introduction of defects. All these calculations were performed on ab initio DFT framework.