Performance analysis of a Silicon Carbide IGBT for SVM PWM induction motor drive applications

Silicon Carbide (SiC) IGET has started getting extensive significance in different power electronics and motor drives applications during the last two decades. SiC IGBT can be used as a substitute to Silicon IGBT in application areas where very high level efficiency, high switching frequencies, incomparably lower switching losses and operation at elevated temperatures are aimed. This paper examines the switching behavior of SiC IGBT used for a SVM PWM induction motor drive application. The conduction losses and switching losses are calculated from the datasheet look up table while simulating the detailed inverter losses of the motor drive. Two test systems have been considered like one using Si IGBT and other using SiC IGBT for SVM PWM induction motor drive. Better dynamic performances, higher efficiency are obtained in simulated results using MATLAB.