Computational study of Silicene-CNT double junctions

In this work, we investigate the contact and channel material dependency of the transport properties of Siticene and Armchair CNT based heterostructure devices. The Density of States (DOS) of the heterojunction materials and transport properties like Device Density of States, transmission eigenstate, transmission pathway, transmission spectrum and I-V characteristics of two structures - CNT-Si-CNT and Si-CNT-Si are investigated. We see that CNT-Silicene-CNT heterojunction gives higher current and it is more conducive for FET device application. This device also shows better transport properties in terms of transmission Eigenstate, Transmission pathway and IV characteristics.