RF analysis of work function modulated cylindrical surrounding gate MOSFET

The unique design along with greater accuracy in device performance has made cylindrical surrounding gate MOSFET (CSGM) a cutting edge device in the present VLSI technology. Due to its cylindrical geometry, this device provides higher packing density and higher scaling possibilities. The fabrication process of a surface channel device with proper threshold voltage (Vth) directly depends upon the work function of the gate electrode. By keeping it in mind, a work function engineering based metal gate with continuous mole fraction variation along the z-axis in a cylindrical surrounding gate MOSFET (WMCSGM) is introduced. The present WMCSGM model exhibits improved RF performance as compared to CSGM model. The RF performance of the model is extensively investigated in terms of different figure of merits such as cut-off frequency, transconductance and gate capacitance.