Analysis of AlGaN/GaN high electron mobility transistor for high frequency application

This paper presents an AlGaN/GaN High Electron Mobility Transistor (HEMT) structure with SiNx surface passivation layer. A T-shaped gate is formed at the top of GaN cap layer. The structure is simulated with Sapphire substrate. Output characteristics curve (Id-Ids), threshold voltage (F
_T
), subthreshold slope and unity current gain cut off frequency (f
_r
) of the device are observed. The proposed device exhibits a threshold voltage V
_t
= -4 V, peak current is about 500 mA, subthreshold slope of 185 mV/dec and unity current gain cutoff frequency f
_T
= 73.6 GHz. All the simulations are performed using Silvaco ATLASTM.