Analysis of breakdown voltage of a field plated High Electron Mobility Transistor

This paper proposes a High Electron Mobility Transistor (HEMT) which analyzed using Silvaco ATLAS™ Tools. The proposed device is an AlGaN/GaN HEMT with AlN acting as a spacer layer. The design also includes a field plated gate to increase the breakdown voltage (V
_BR
). The proposed device has a low threshold voltage V
_t
=-11 V and minimal OFF state leakage current. The device exhibits peak drain current of 2.5 mA when the gate is biased at V
_GS
= 1 V. The subthreshold slope is observed as 75 mV/dec and the ON-OFF current ratio observed is 10
¹⁴
. The proposed device achieves breakdown voltage in the range of 231 to 235 volts depending upon thickness of Gallium Nitride channel layer and hence the device can find high power applications.