Avalanche noise in MQW DDR IMPATTs

The avalanche noise performance of multiple quantum well (MQW) DDR IMPATT devices has been investigated. A self-consistent quantum drift-diffusion (SCDD) model is used for the simulation study. The noise performance of one Si based flat and two Si∼3C-SiC MQW DDRs have been studied in this paper. Results indicate that considerable low noise operation with high power output can be obtained at W-band by using the Si∼3C-SiC MQW DDR structures.