New 3D doping profile measurement and TCAD simulation of radiation damage in advacam active edge pixel detector for high energy physics experiments

This work addresses the study of active edge n-in-p planar sensors. Active edge planar pixel sensors are promising candidates to instrument the inner layers of the new ATLAS pixel detector for High Luminosity Large Hadron Collider (HL-LHC), thanks to its radiation tolerant properties and the increased fraction of active area due to a distance as low as 50 μm between the last pixel implants and the activate edge. This work is mainly aimed to investigate the radiation hardness of active edge sensors using Synopsys Technology Computer-Aided Design (TCAD) simulation by introducing traps inside the bulk. The effect of radiation damage on the breakdown voltage and leakage current in particular for different radiation fluences will be shown. Moreover, simulation based on TCAD of the doping profile as well as 3D Secondary Ion Mass Spectroscopy (SIMS) measurements will be shown. For the first time in High Energy Physics (HEP), SIMS Imaging method is used to extract 3D doping profiles.