Wafer level heterogeneous integration of a transceiver module in millimeter wave using photosensitive BCB

In this paper, the heterogeneous integration of a transceiver module in millimeter wave using photosensitive BCB is presented, whereby different semiconductor technologies such as silicon germanium (SiGe), gallium arsenide (GaAs) and gallium nitride (GaN) are assigned to each functional block depending on their respective strengths of RF performance, such as low-noise, mixed-signal and high-power operations. One low-noise amplifier as a driver amplifier and one medium power amplifier with its output power 25 dBm were cascaded and embedded into the wafer for a transmitter chain. In order to understand the thermal management of the wafer level packaging based transceiver, its thermal distributions were measured by using a thermal imager and compared with our own electro-thermo-stress simulation tools. The thermal and inner stress formulas were also deduced.