Design and Analysis of CMOS T/R Switches With the Impedance Transformation Technique

We present a 1.9-GHz high-power-handling complementary metal-oxide-semiconductor (CMOS) transmit/ receive (T/R) switch with the impedance transformation technique (ITT). The losses of the T/R switch, including matching networks, are analyzed, and the design method for the selection of an optimal switch operating impedance (RSW) is presented. The proposed T/R switch is implemented in a standard 0.18-μm CMOS process. Experimental data show that the proposed design achieves more than 2 W of power-handling capability.