Three-dimensional multi-subband simulation of scaled FinFETs

We simulated the static behavior of scaled FinFETs employing a self-consistent Multi-Subband Ensemble Monte Carlo simulator for non-planar devices. To be able to take into account the three-dimensional device structure, the 2D Schrödinger equation is solved in several cross sections; the coupled solution of the 3D Poisson equation and the 1D Boltzmann transport equation through the ensemble Monte Carlo method guarantees self-consistency. This simulator allowed us to study the effects of different fin aspect ratios while properly taking into account quantum confinement in the plane perpendicular to the transport direction. We studied the transfer characteristic as a function of different geometric parameters, the effect of quantum confinement on the charge distribution and the scaling behavior, down to a channel length of 10 nm.