TEM applications for III-V material analysis

The application of techniques utilizing transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and energy dispersive spectroscopy (EDS) to identify the interface and defect property in GaN based materials is presented. Several parameters including STEM camera length and probe size were demonstrated to have significantly influence on image contrast and layer thickness, respectively. The dislocation, localized strain and polarity of GaN were also reviewed in this work. By choosing the optimized parameters, rapid and accurate analysis of detail structural and electronic information could be obtained.