Drain current model based on the Meyer-Neldel Rule for polycrystalline ZnO thin-film transistors at different temperatures

Based on the Meyer-Neldel Rule (MNR), analytical drain current model is presented for the polycrystalline ZnO thin-film transistors at different temperatures. The MNR-based drain current model is developed from the surface-potential-based model considering the effective medium approximation (EMA). Applying the Meyer-Neldel Rule, the drain current model is developed. The model results are in agreement with the available experimental data at different temperatures.