Investigation of on-state power handling dependence on number of cycles for germanium telluride RF switches

The dependence of on-state Germanium Telluride (GeTe) RF power handling as a function of device cycling is presented. The data is also compared to computer based models in order to determine a possible method of failure at high RF input powers. The device is thermally actuated by an embedded tungsten heater and tested at 1.8GHz. The measurements are compared to a computer based model. The data shows the power handling improves as the device is continually cycled. The results suggest the devices fail due to limiting the current's cross sectional area causing current crowding and excess heat generation.