Fabrication and characterization of VO2-based series and parallel RF switches

This paper presents two Vanadium Oxide (VO
₂
)-based RF switches - one series switch and one parallel switch. A copper-based fabrication process used for fabricating the switches is described in details. The VO
₂
films of the fabricated switches are characterized with X-ray diffraction and atomic force microscopy (AFM) to optimize film quality. Simulations results are presented for both switches up to 75 GHz. The measured results demonstrate an insertion loss of better than 0.4 dB and an isolation close to 30 dB up to 20 GHz.