A study of the terahertz C-V characteristic of the Schottky barrier diode

In this paper, we present a concept called the terahertz C-V characteristic of the Schottky barrier diode, which is different from the conventional C-V characteristics. We have also presented a new equation to precisely describe it. The terahertz C-V characteristic has been carefully examined, first by using the measured capacitances at low frequencies and then by using a 225 GHz tripler. The results show this new concept is rational and necessary in terahertz regions. The agreement between the simulated and measured results of the 225 GHz tripler is improved by using the terahertz C-V characteristic.