High-efficiency high-power linearized L-band SSPA for navigational satellites

A 400 watt Gallium Nitride (GaN) Solid State Power Amplifier (SSPA) has been developed for use on navigational satellites at L-Band. This amplifier takes advantage of recent advances in high voltage GaN high-electron-mobility transistors (HEMTs), along with predistortion linearization (PDL), to achieve high output power, improved linearity, and greater power added efficiency (PAE). A peak power of 510 W with a PAE of 65.8% has been achieved with a maximum phase slope of less than 1°/dB.