A sub-milliwatt 4–8 GHz SiGe cryogenic low noise amplifier

A 4-8 GHz Silicon-Germanium (SiGe) cryogenic low-noise amplifier (LNA) was designed and implemented using the Global Foundries BiCMOS8HP process. The amplifier provides 30-dB and 26-dB of gain while dissipating 760 μW and 580 μW DC power, respectively. The noise temperature is approximately 8 K across the frequency band. To the best of the authors' knowledge, this is the lowest reported power to date for a wide-band cryogenic integrated circuit LNA in this frequency range.