0.01 GHz to 110 GHz distributed common-gate power detector in standard CMOS 65 nm technology

A broadband distributed common-gate power detector (D-CGPD) is demonstrated in the paper. The D-CGPD consists of finite-ground CPWs and nMOSFETs biased in the resistive regime, which consumes no quiescent current. With the distributed configuration, measured sensitivity of 700.8 mV/mW and 68 mV/mW is obtained at 0.01 GHz and 110 GHz, respectively. Measured S
₁₁
is below -15 dB for entire band. A standalone CGPD which has the same transconductance as the D-CGPD is implemented for comparison. According to the experimental verification, the D-CGPD reaches the highest sensitivity at 110 GHz under matching condition. To the best of our knowledge, this is the first D-CGPD reported in CMOS technology.