Advanced CPP-GMR Spin-Valve Sensors for Narrow Reader Applications

The near-future ultra-high-density magnetic recording with an assist recording technology requires a substantial evolution of the read-head technology. A read sensor with a small sensor resistance-area product (RA), a large magnetoresistance ratio (ΔR/R), and a thin total sensor thickness is required for the low bit error rate and high-spatial resolution of reading. We developed current-perpendicular-to-plane giant magnetoresistance sensors using highly spin-polarized Heusler alloy ferromagnetic layers with the spin polarization of the conducting electron β ~ 0.8. A reasonably large ΔR/R up to 14% was obtained by a practical bottom-pinned spin-valve structure with a conventional metallic spacer layer of an Ag
₉₀
Sn
₁₀
(AgSn) alloy. By replacing the spacer layer with a conductive oxide-based AgSn/InZnO bilayer, a large ΔR/R up to 32% was realized at RA value of ~0.1 Ω · μm
²
, which is optimal for the read sensor application. A large voltage output up to 6 mV was obtained for a sensor utilization of ~33% at a bias voltage of 100 mV.