Optimization of subthreshold swing for multilayer MoS2 tunnel transistor

The subthreshold swing of metal-oxide-semiconductor field-effect transistor (MOSFET) is fundamentally limited by the thermal voltage (kT/q), which imposes restriction on achievable on-off current ratio or device gain. An alternative to break this thermionic limit of silicon CMOS devices is to adopt tunnel FET (TFET) technology that does not depend on thermal potential. We recently introduced a multilayer molybdenum disulfide (MoS
₂
) based SOI-TFET device to utilize different switching mechanisms to achieve a steeper subthreshold slope (lower value of S) for ultra-low power applications. An analytical model of the subthreshold swing of the proposed device is derived based on its physics and geometry. The model shows that subthreshold swing value is not limited by the factor kT/q in the proposed MoS
₂
TFET. The design parameters to improve the subthreshold characteristics of the proposed device are studied. An optimization approach is presented based on theoretical study and simulation results.