In0.53Ga0.47As/InP Trench-Gate Power MOSFET Based on Impact Ionization for Improved Performance: Design and Analysis

A novel In
_0.53
Ga
_0.47
As/InP heterostructure trench-gate power MOSFET employing impact ionization at the hetero junction of n
^-
In
_0.53
Ga
_0.47
As drift region and n
⁺
InP drain region has been proposed. The impact ionization supports the band-to-band tunneling at heterojunction, which further increases the drain current. It results in reduced ON-state resistance and improved transconductance without compromising with the breakdown voltage as compared with the conventional silicon trench-gate MOSFET (CTGMOS). Using 2-D numerical simulations, we demonstrate that the proposed device exhibits ~440% improvement in peak transconductance, ~92% reduction in on-state resistance, ~10% increase in breakdown voltage, ~16% increase in switching speed, and ~93% improvement in figure of Merit (R
_ON
.Q
_GD
) as compared with CTGMOS.